DMP3007SPSQ-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 3+ | 132.09 грн |
| 10+ | 82.49 грн |
| 100+ | 47.89 грн |
| 500+ | 39.24 грн |
| 1000+ | 34.32 грн |
| 2500+ | 31.22 грн |
Відгуки про товар
Написати відгук
Технічний опис DMP3007SPSQ-13 Diodes Incorporated
Description: MOSFET 25V~30V POWERDI5060-8, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMP3007SPSQ-13 за ціною від 31.39 грн до 35.88 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| DMP3007SPSQ-13 | Diodes Incorporated |
Description: MOSFET 25V~30V POWERDI5060-8Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 110000 шт: термін постачання 21-31 дні (днів) |
|
| DMP3007SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 25V~30V POWERDI5060-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET 25V~30V POWERDI5060-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Qualification: AEC-Q101
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 35.88 грн |
| 5000+ | 32.90 грн |
| 12500+ | 31.39 грн |


