Технічний опис DMP3008SFG-13 Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W, Polarisation: unipolar, Pulsed drain current: -80A, Drain current: -9.3A, Drain-source voltage: -30V, Gate-source voltage: ±20V, Gate charge: 47nC, On-state resistance: 25mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 2.2W, Kind of channel: enhancement, Type of transistor: P-MOSFET, Case: PowerDI3333-8, Mounting: SMD.
Інші пропозиції DMP3008SFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP3008SFG-13 | Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMP3008SFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W Polarisation: unipolar Pulsed drain current: -80A Drain current: -9.3A Drain-source voltage: -30V Gate-source voltage: ±20V Gate charge: 47nC On-state resistance: 25mΩ Kind of package: 13 inch reel; tape Power dissipation: 2.2W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP3008SFG-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K
MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K
товару немає в наявності
В кошику
од. на суму грн.
| DMP3008SFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -9.3A
Drain-source voltage: -30V
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 25mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -9.3A
Drain-source voltage: -30V
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 25mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 2.2W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.