DMP3010LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 17A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 2500+ | 23.70 грн |
| 5000+ | 21.09 грн |
| 7500+ | 20.20 грн |
| 12500+ | 18.03 грн |
| 17500+ | 17.48 грн |
| 25000+ | 16.94 грн |
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Технічний опис DMP3010LK3-13 Diodes Incorporated
Description: MOSFET P-CH 30V 17A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V.
Інші пропозиції DMP3010LK3-13 за ціною від 20.18 грн до 90.98 грн
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DMP3010LK3-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 V-30V TO252 T&R 2.5K |
на замовлення 9544 шт: термін постачання 21-30 дні (днів) |
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DMP3010LK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 17A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V |
на замовлення 42615 шт: термін постачання 21-31 дні (днів) |
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