DMP3011SFVW-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V POWERDI333, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 980mW (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Packaging: Tape & Reel (TR).