DMP3011SFVWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис DMP3011SFVWQ-13 Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Power Dissipation (Max): 980mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMP3011SFVWQ-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DMP3011SFVWQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 11.5A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 980mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP3011SFVWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |
| DMP3011SFVWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Power dissipation: 2.25W Case: PowerDI3333-8 Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 46nC Application: automotive industry Pulsed drain current: -176A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMP3011SFVWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMP3011SFVWQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| DMP3011SFVWQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.25W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 46nC
Application: automotive industry
Pulsed drain current: -176A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.25W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 46nC
Application: automotive industry
Pulsed drain current: -176A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.