DMP3011SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 23.70 грн |
| 5000+ | 21.12 грн |
| 7500+ | 20.25 грн |
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Технічний опис DMP3011SSS-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMP3011SSS-13 за ціною від 19.41 грн до 79.91 грн
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DMP3011SSS-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V SO-8 T and R 2.5K |
на замовлення 2028 шт: термін постачання 21-30 дні (днів) |
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DMP3011SSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 13435 шт: термін постачання 21-31 дні (днів) |
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