DMP3015LSSQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2748 pF @ 20 V
Qualification: AEC-Q101
на замовлення 172500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 35.52 грн |
| 5000+ | 31.79 грн |
| 7500+ | 31.67 грн |
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Технічний опис DMP3015LSSQ-13 Diodes Incorporated
Description: MOSFET P-CH 30V 13A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2748 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції DMP3015LSSQ-13 за ціною від 30.64 грн до 128.97 грн
| Фото | Назва | Виробник | Інформація |
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DMP3015LSSQ-13 | Виробник : Diodes Incorporated |
MOSFETs Single -30V P-Ch Enh FET -20Vgss |
на замовлення 2458 шт: термін постачання 21-30 дні (днів) |
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DMP3015LSSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 13A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2748 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 174983 шт: термін постачання 21-31 дні (днів) |
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DMP3015LSSQ-13 | Виробник : Diodes Inc |
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
товару немає в наявності |
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DMP3015LSSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.75A Pulsed drain current: -45A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 60.4nC Application: automotive industry кількість в упаковці: 2500 шт |
товару немає в наявності |
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DMP3015LSSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.75A Pulsed drain current: -45A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 60.4nC Application: automotive industry |
товару немає в наявності |