DMP3026SFDE-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 30V 10.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 10.23 грн |
| 20000+ | 9.28 грн |
| 30000+ | 9.12 грн |
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Технічний опис DMP3026SFDE-13 Diodes Incorporated
Description: MOSFET P-CH 30V 10.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V.
Інші пропозиції DMP3026SFDE-13 за ціною від 10.23 грн до 52.52 грн
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DMP3026SFDE-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 5506 шт: термін постачання 21-30 дні (днів) |
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DMP3026SFDE-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 10.4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V |
на замовлення 59440 шт: термін постачання 21-31 дні (днів) |
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| DMP3026SFDE-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.4A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement кількість в упаковці: 10000 шт |
товару немає в наявності |
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| DMP3026SFDE-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.4A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |