DMP3028LPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.82 грн |
5000+ | 21.73 грн |
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Технічний опис DMP3028LPSQ-13 Diodes Incorporated
Description: DIODES INC. - DMP3028LPSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 21 A, 0.018 ohm, PowerDI 5060, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 21A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.3V, euEccn: NLR, Verlustleistung: 1.28W, Bauform - Transistor: PowerDI 5060, Anzahl der Pins: 8Pin(s), Produktpalette: PW Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.018ohm, SVHC: No SVHC (14-Jun-2023).
Інші пропозиції DMP3028LPSQ-13 за ціною від 21.43 грн до 75.72 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMP3028LPSQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMP3028LPSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 21 A, 0.018 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 1.28W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (14-Jun-2023) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMP3028LPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 21A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 5969 шт: термін постачання 21-31 дні (днів) |
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DMP3028LPSQ-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V |
на замовлення 2300 шт: термін постачання 21-30 дні (днів) |
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DMP3028LPSQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMP3028LPSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 21 A, 0.018 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 1.28W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (14-Jun-2023) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMP3028LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.12W On-state resistance: 38mΩ Polarisation: unipolar Drain current: -17A Drain-source voltage: -30V Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -70A кількість в упаковці: 2500 шт |
товар відсутній |
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DMP3028LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.12W On-state resistance: 38mΩ Polarisation: unipolar Drain current: -17A Drain-source voltage: -30V Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -70A |
товар відсутній |