на замовлення 4681 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.50 грн |
| 10+ | 37.64 грн |
| 100+ | 22.84 грн |
| 500+ | 17.86 грн |
| 1000+ | 14.50 грн |
| 3000+ | 13.47 грн |
| 9000+ | 12.81 грн |
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Технічний опис DMP3036SFV-13 Diodes Incorporated
Description: MOSFET P-CH 30V 30A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V.
Інші пропозиції DMP3036SFV-13 за ціною від 14.86 грн до 45.93 грн
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DMP3036SFV-13 | Виробник : Diodes Incorporated |
 Description: MOSFET P-CH 30V 30A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V |
на замовлення 2108 шт: термін постачання 21-31 дні (днів) |
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| DMP3036SFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.5nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товару немає в наявності |
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DMP3036SFV-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V |
товару немає в наявності |
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| DMP3036SFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.5nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET |
товару немає в наявності |