DMP3037LSS-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 12+ | 29.33 грн |
| 14+ | 24.57 грн |
| 100+ | 15.99 грн |
| 500+ | 12.78 грн |
| 1000+ | 9.64 грн |
| 2500+ | 7.96 грн |
| 10000+ | 7.82 грн |
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Технічний опис DMP3037LSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 5.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V.
Інші пропозиції DMP3037LSS-13 за ціною від 11.34 грн до 46.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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DMP3037LSS-13 | Diodes Incorporated |
 Description: MOSFET P-CH 30V 5.8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V |
на замовлення 2029 шт: термін постачання 21-31 дні (днів) |
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| DMP3037LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V
на замовлення 2029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 11+ | 27.61 грн |
| 100+ | 17.72 грн |
| 500+ | 12.63 грн |
| 1000+ | 11.34 грн |