DMP3056LDM-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.90 грн |
| 6000+ | 7.84 грн |
| 9000+ | 7.51 грн |
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Технічний опис DMP3056LDM-7 Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V.
Інші пропозиції DMP3056LDM-7 за ціною від 11.06 грн до 149.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMP3056LDM-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 4.3A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V |
на замовлення 97587 шт: термін постачання 21-31 дні (днів) |
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DMP3056LDM-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -13A; 1.25W; SOT26 Mounting: SMD Pulsed drain current: -13A Power dissipation: 1.25W Polarisation: unipolar Drain current: -4.3A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT26 On-state resistance: 45mΩ |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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DMP3056LDM-7 | Diodes Incorporated |
MOSFETs P-Channel 1.25W |
на замовлення 13551 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP3056LDM-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Description: MOSFET P-CH 30V 4.3A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
на замовлення 97587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 12+ | 26.94 грн |
| 100+ | 17.30 грн |
| 500+ | 12.33 грн |
| 1000+ | 11.06 грн |
| DMP3056LDM-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -13A; 1.25W; SOT26
Mounting: SMD
Pulsed drain current: -13A
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -4.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 45mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -13A; 1.25W; SOT26
Mounting: SMD
Pulsed drain current: -13A
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -4.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 45mΩ
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.11 грн |
| DMP3056LDM-7 |
|
Виробник: Diodes Incorporated
MOSFETs P-Channel 1.25W
MOSFETs P-Channel 1.25W
на замовлення 13551 шт:
термін постачання 21-30 дні (днів)