| Кількість | Ціна |
|---|---|
| 12+ | 28.96 грн |
| 16+ | 21.19 грн |
| 100+ | 10.48 грн |
| 500+ | 7.10 грн |
| 1000+ | 5.42 грн |
| 2500+ | 5.34 грн |
| 5000+ | 4.64 грн |
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Технічний опис DMP3125L-13 Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V.
Інші пропозиції DMP3125L-13 за ціною від 6.20 грн до 37.18 грн
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DMP3125L-13 | Diodes Incorporated |
 Description: MOSFET P-CH 30V 2.5A SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V |
на замовлення 4780 шт: термін постачання 21-31 дні (днів) |
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| DMP3125L-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V
Description: MOSFET P-CH 30V 2.5A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V
на замовлення 4780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.18 грн |
| 12+ | 26.44 грн |
| 100+ | 14.96 грн |
| 500+ | 9.29 грн |
| 1000+ | 7.13 грн |
| 2000+ | 6.20 грн |