DMP3130LQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.86 грн |
| 6000+ | 8.17 грн |
| 9000+ | 7.52 грн |
| 15000+ | 6.92 грн |
| 21000+ | 6.74 грн |
| 30000+ | 6.49 грн |
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Технічний опис DMP3130LQ-7 Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції DMP3130LQ-7 за ціною від 9.77 грн до 41.07 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMP3130LQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Qualification: AEC-Q101 |
на замовлення 31286 шт: термін постачання 21-31 дні (днів) |
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DMP3130LQ-7 | Diodes Incorporated |
MOSFETs P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101 |
на замовлення 34401 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP3130LQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Qualification: AEC-Q101
на замовлення 31286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 13+ | 24.77 грн |
| 100+ | 12.14 грн |
| 500+ | 10.92 грн |
| 1000+ | 9.77 грн |
| DMP3130LQ-7 |
|
Виробник: Diodes Incorporated
MOSFETs P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101
MOSFETs P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101
на замовлення 34401 шт:
термін постачання 21-30 дні (днів)