DMP3165SVT-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V-30V TSOT26, Input Capacitance (Ciss) (Max) @ Vds: 287 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).