DMP31D7LFBQ-7B Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X1-DFN1006, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 530mW (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V, Current - Continuous Drain (Id) @ 25°C: 810mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: X1-DFN1006-3.