DMP32D4S-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.77 грн |
| 6000+ | 5.45 грн |
| 9000+ | 5.16 грн |
| 15000+ | 4.49 грн |
| 21000+ | 4.36 грн |
| 30000+ | 3.96 грн |
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Технічний опис DMP32D4S-7 Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DMP32D4S-7 за ціною від 4.43 грн до 32.00 грн
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DMP32D4S-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 300MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V |
на замовлення 66050 шт: термін постачання 21-31 дні (днів) |
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DMP32D4S-7 | Diodes Incorporated |
MOSFETs 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA |
на замовлення 17356 шт: термін постачання 21-30 дні (днів) |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
на замовлення 66050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 18+ | 17.52 грн |
| 100+ | 11.09 грн |
| 500+ | 7.76 грн |
| 1000+ | 6.53 грн |
| DMP32D4S-7 |
|
Виробник: Diodes Incorporated
MOSFETs 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA
MOSFETs 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA
на замовлення 17356 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.00 грн |
| 17+ | 19.25 грн |
| 100+ | 7.88 грн |
| 1000+ | 6.26 грн |
| 3000+ | 4.85 грн |
| 9000+ | 4.64 грн |
| 24000+ | 4.43 грн |