Технічний опис DMP4013LFG-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W, Kind of package: reel; tape, Gate charge: 68.6nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: PowerDI3333-8, Pulsed drain current: -80A, Drain-source voltage: -40V, Drain current: -11A, On-state resistance: 18mΩ, Type of transistor: P-MOSFET, Mounting: SMD, Power dissipation: 2.1W, Polarisation: unipolar, кількість в упаковці: 3000 шт.
Інші пропозиції DMP4013LFG-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP4013LFG-13 | Виробник : Diodes Zetex | Trans MOSFET P-CH 40V 10.3A 8-Pin PowerDI EP T/R |
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DMP4013LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: reel; tape Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
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DMP4013LFG-13 | Виробник : Diodes Incorporated | MOSFET |
товар відсутній |
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DMP4013LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: reel; tape Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar |
товар відсутній |