DMP4013SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.06 грн |
| 10+ | 82.16 грн |
| 100+ | 55.29 грн |
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Технічний опис DMP4013SPSQ-13 Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції DMP4013SPSQ-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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DMP4013SPSQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 11A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
DMP4013SPSQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP4013SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -244A Drain current: -9A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 23mΩ Power dissipation: 3.4W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI5060-8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMP4013SPSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMP4013SPSQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
MOSFETs MOSFET BVDSS: 31V-40V
товару немає в наявності
В кошику
од. на суму грн.
| DMP4013SPSQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.