| Кількість | Ціна |
|---|---|
| 6+ | 55.71 грн |
| 10+ | 38.33 грн |
| 100+ | 22.72 грн |
| 500+ | 18.78 грн |
| 1000+ | 16.17 грн |
| 3000+ | 12.38 грн |
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Технічний опис DMP4025SFGQ-13 Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8, Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 810mW (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMP4025SFGQ-13 за ціною від 17.26 грн до 68.04 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DMP4025SFGQ-13 | Diodes Incorporated |
 Description: MOSFET P-CH 40V 7.2A PWRDI3333-8Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1128 шт: термін постачання 21-31 дні (днів) |
|
| DMP4025SFGQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 40.53 грн |
| 100+ | 26.41 грн |
| 500+ | 19.10 грн |
| 1000+ | 17.26 грн |