DMP4047LFDEQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 10000+ | 8.43 грн |
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Технічний опис DMP4047LFDEQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 4.4A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 20 V.
Інші пропозиції DMP4047LFDEQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP4047LFDEQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V U-DFN2020-6 T&R 10K |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMP4047LFDEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W Kind of package: 13 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Pulsed drain current: -36A Drain current: -5.2A Gate charge: 24.9nC On-state resistance: 50mΩ Power dissipation: 2.1W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP4047LFDEQ-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V-40V U-DFN2020-6 T&R 10K
MOSFET MOSFET BVDSS: 31V-40V U-DFN2020-6 T&R 10K
товару немає в наявності
В кошику
од. на суму грн.
| DMP4047LFDEQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.