DMP4051LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 2500+ | 15.29 грн |
| 5000+ | 13.50 грн |
| 7500+ | 12.88 грн |
| 12500+ | 11.43 грн |
| 17500+ | 11.04 грн |
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Технічний опис DMP4051LK3-13 Diodes Incorporated
Description: DIODES INC. - DMP4051LK3-13 - Leistungs-MOSFET, p-Kanal, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 10.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 4.18W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.051ohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції DMP4051LK3-13 за ціною від 11.39 грн до 82.05 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMP4051LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252 Case: TO252 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.4A On-state resistance: 85mΩ Power dissipation: 8.9W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 471 шт: термін постачання 14-30 дні (днів) |
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DMP4051LK3-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET 40V P-CHANNEL |
на замовлення 61372 шт: термін постачання 21-30 дні (днів) |
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DMP4051LK3-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 7.2A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
на замовлення 22663 шт: термін постачання 21-31 дні (днів) |
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DMP4051LK3-13 | DIODES INC. |
Description: DIODES INC. - DMP4051LK3-13 - Leistungs-MOSFET, p-Kanal, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 4.18W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.051ohm SVHC: Lead (25-Jun-2025) |
на замовлення 1289 шт: термін постачання 21-31 дні (днів) |
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| DMP4051LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Power dissipation: 8.9W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Power dissipation: 8.9W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 471 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.40 грн |
| 20+ | 22.26 грн |
| 50+ | 17.78 грн |
| 100+ | 16.34 грн |
| DMP4051LK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET 40V P-CHANNEL
MOSFETs ENHANCE MODE MOSFET 40V P-CHANNEL
на замовлення 61372 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.18 грн |
| 10+ | 37.44 грн |
| 100+ | 19.83 грн |
| 500+ | 15.75 грн |
| 1000+ | 14.56 грн |
| 2500+ | 11.46 грн |
| 5000+ | 11.39 грн |
| DMP4051LK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
на замовлення 22663 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.50 грн |
| 10+ | 37.33 грн |
| 100+ | 24.17 грн |
| 500+ | 17.38 грн |
| 1000+ | 15.67 грн |
| DMP4051LK3-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMP4051LK3-13 - Leistungs-MOSFET, p-Kanal, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 4.18W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.051ohm
SVHC: Lead (25-Jun-2025)
Description: DIODES INC. - DMP4051LK3-13 - Leistungs-MOSFET, p-Kanal, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 4.18W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.051ohm
SVHC: Lead (25-Jun-2025)
на замовлення 1289 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 82.05 грн |
| 50+ | 50.21 грн |
| 100+ | 34.38 грн |
| 500+ | 25.07 грн |
| 1000+ | 19.48 грн |