DMP45H150DHE-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 250MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 13.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 10.83 грн |
| 5000+ | 10.29 грн |
| 7500+ | 10.09 грн |
| 12500+ | 9.03 грн |
| 17500+ | 8.71 грн |
| 25000+ | 8.46 грн |
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Технічний опис DMP45H150DHE-13 Diodes Incorporated
Description: MOSFET P-CH 450V 250MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Tc), Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V, Power Dissipation (Max): 13.9W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V.
Інші пропозиції DMP45H150DHE-13 за ціною від 12.24 грн до 40.30 грн
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DMP45H150DHE-13 | Diodes Incorporated |
Description: MOSFET P-CH 450V 250MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tc) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Power Dissipation (Max): 13.9W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V |
на замовлення 62566 шт: термін постачання 21-31 дні (днів) |
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| DMP45H150DHE-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 250MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 13.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V
Description: MOSFET P-CH 450V 250MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 13.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V
на замовлення 62566 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 11+ | 28.65 грн |
| 100+ | 20.01 грн |
| 500+ | 14.31 грн |
| 1000+ | 12.24 грн |