DMP45H4D9HJ3 Diodes Incorporated

Description: MOSFET P-CH 450V 4.6A TO251, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).