DMP45H4D9HJ3 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.09 грн |
| 25+ | 33.88 грн |
| 75+ | 30.61 грн |
| 150+ | 28.60 грн |
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Технічний опис DMP45H4D9HJ3 DIODES INCORPORATED
Description: MOSFET P-CH 450V 4.6A TO251, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції DMP45H4D9HJ3 за ціною від 65.61 грн до 127.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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DMP45H4D9HJ3 | Diodes Incorporated |
Description: MOSFET P-CH 450V 4.6A TO251 Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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| DMP45H4D9HJ3 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 251V-500V |
на замовлення 346 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP45H4D9HJ3 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 4.6A TO251
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 450V 4.6A TO251
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.76 грн |
| 10+ | 77.59 грн |
| 25+ | 65.61 грн |
| DMP45H4D9HJ3 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFETBVDSS: 251V-500V
MOSFETs MOSFETBVDSS: 251V-500V
на замовлення 346 шт:
термін постачання 21-30 дні (днів)