DMP510DLQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 520mW (Ta), Rds On (Max) @ Id, Vgs: 9.5Ohm @ 100mA, 5V, Current - Continuous Drain (Id) @ 25°C: 196mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).