DMP6050SPSW-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис DMP6050SPSW-13 Diodes Incorporated
Description: IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.3W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V.
Інші пропозиції DMP6050SPSW-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP6050SPSW-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K |
товару немає в наявності |