Технічний опис DMP610DLQ-13 Diodes Inc
Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 186mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP610DLQ-13
Фото | Назва | Виробник | Інформація |
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DMP610DLQ-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 186mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DMP610DLQ-13 | Виробник : Diodes Incorporated |
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товару немає в наявності |