DMP6110SSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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Технічний опис DMP6110SSD-13 Diodes Incorporated
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.8A, Dauer-Drainstrom Id, p-Kanal: 7.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm, Verlustleistung, p-Kanal: 1.2W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pins, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 1.2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (15-Jan-2018).
Інші пропозиції DMP6110SSD-13 за ціною від 17.10 грн до 56.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMP6110SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.3A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 3576 шт: термін постачання 21-31 дні (днів) |
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DMP6110SSD-13 | Diodes Incorporated |
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs |
на замовлення 5180 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMP6110SSD-13 | DIODES INC. |
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm Verlustleistung, p-Kanal: 1.2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMP6110SSD-13 | DIODES INC. |
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7.8A Dauer-Drainstrom Id, p-Kanal: 7.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm Verlustleistung, p-Kanal: 1.2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| DMP6110SSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 3576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.44 грн |
| 10+ | 39.68 грн |
| 100+ | 26.17 грн |
| 500+ | 18.92 грн |
| 1000+ | 17.10 грн |
| DMP6110SSD-13 |
|
Виробник: Diodes Incorporated
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs
на замовлення 5180 шт:
термін постачання 21-30 дні (днів)
| DMP6110SSD-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| DMP6110SSD-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.8A
Dauer-Drainstrom Id, p-Kanal: 7.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMP6110SSD-13 - Dual-MOSFET, p-Kanal, 60 V, 60 V, 7.8 A, 7.8 A, 0.105 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.8A
Dauer-Drainstrom Id, p-Kanal: 7.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.105ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)