DMP6110SSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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Технічний опис DMP6110SSD-13 Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V, Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.
Інші пропозиції DMP6110SSD-13 за ціною від 17.14 грн до 56.57 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMP6110SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.3A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 3576 шт: термін постачання 21-31 дні (днів) |
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DMP6110SSD-13 | Diodes Incorporated |
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs |
на замовлення 5180 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP6110SSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 3576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 39.77 грн |
| 100+ | 26.23 грн |
| 500+ | 18.97 грн |
| 1000+ | 17.14 грн |
| DMP6110SSD-13 |
|
Виробник: Diodes Incorporated
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs
на замовлення 5180 шт:
термін постачання 21-30 дні (днів)