DMP68D0LFB-7B Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V X2-DFN100
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
на замовлення 6569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.75 грн |
| 26+ | 12.39 грн |
| 100+ | 7.74 грн |
| 500+ | 5.36 грн |
| 1000+ | 4.74 грн |
| 2000+ | 4.22 грн |
| 5000+ | 3.59 грн |
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Технічний опис DMP68D0LFB-7B Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V X2-DFN100, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 192mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V.
Інші пропозиції DMP68D0LFB-7B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP68D0LFB-7B | Виробник : Diodes Inc |
65V P-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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DMP68D0LFB-7B | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V X2-DFN100 Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 192mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V |
товару немає в наявності |