DMPH3010LPSQ-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
кількість в упаковці: 2500 шт
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Технічний опис DMPH3010LPSQ-13 DIODES INCORPORATED
Description: MOSFET P-CH 30V 60A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V.
Інші пропозиції DMPH3010LPSQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMPH3010LPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 60A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V |
товар відсутній |
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DMPH3010LPSQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K |
товар відсутній |
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| DMPH3010LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -11A On-state resistance: 10mΩ Type of transistor: P-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 139nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -100A |
товар відсутній |