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DMPH4011SK3Q-13 Diodes Incorporated

DMPH4011SK3Q.pdf
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V TO252 T&R 2.5K
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)
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Технічний опис DMPH4011SK3Q-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Power Dissipation (Max): 3.7W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V, Qualification: AEC-Q101.

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DMPH4011SK3Q-13 DMPH4011SK3Q-13 Diodes Incorporated DMPH4011SK3Q.pdf Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V
Qualification: AEC-Q101
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DMPH4011SK3Q-13 DIODES INCORPORATED DMPH4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
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DMPH4011SK3Q-13 DMPH4011SK3Q.pdf
DMPH4011SK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
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DMPH4011SK3Q-13 DMPH4011SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -316A
Drain current: -56A
Drain-source voltage: -40V
Gate charge: 104nC
On-state resistance: 19mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
В кошику  од. на суму  грн.