DMPH4013SK3Q-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 55A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3+ | 113.14 грн |
| 10+ | 68.87 грн |
| 100+ | 46.05 грн |
| 500+ | 34.03 грн |
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Технічний опис DMPH4013SK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 40V 55A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції DMPH4013SK3Q-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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DMPH4013SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 55A TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMPH4013SK3Q-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V TO252 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. |
| DMPH4013SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -120A Drain current: -40A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 23mΩ Power dissipation: 3.7W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
В кошику од. на суму грн. |
| DMPH4013SK3Q-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 55A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 55A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMPH4013SK3Q-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V TO252 T&R 2.5K
MOSFETs MOSFET BVDSS: 31V-40V TO252 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| DMPH4013SK3Q-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -120A
Drain current: -40A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.7W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
товару немає в наявності
В кошику
од. на суму грн.