DMPH4013SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.18 грн |
| 10+ | 99.54 грн |
| 100+ | 67.69 грн |
| 500+ | 50.73 грн |
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Технічний опис DMPH4013SPSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMPH4013SPSQ-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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DMPH4013SPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMPH4013SPSQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMPH4013SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -277A Drain current: -49A Drain-source voltage: -40V Gate charge: 87nC On-state resistance: 23mΩ Power dissipation: 3.3W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI5060-8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMPH4013SPSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMPH4013SPSQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| DMPH4013SPSQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -277A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 87nC
On-state resistance: 23mΩ
Power dissipation: 3.3W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -277A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 87nC
On-state resistance: 23mΩ
Power dissipation: 3.3W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.