DMPH4015SK3Q-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 4+ | 95.84 грн |
| 10+ | 58.25 грн |
| 100+ | 38.65 грн |
| 500+ | 28.36 грн |
| 1000+ | 25.82 грн |
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Технічний опис DMPH4015SK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.7W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMPH4015SK3Q-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMPH4015SK3Q-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 40V 14A/45A TO252Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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DMPH4015SK3Q-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
товару немає в наявності |
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| DMPH4015SK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -100A Drain current: -10A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 15mΩ Power dissipation: 3.3W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |
