DMPH4015SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 11.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 2500+ | 31.39 грн |
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Технічний опис DMPH4015SSS-13 Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 11.4A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W, Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції DMPH4015SSS-13 за ціною від 31.79 грн до 137.02 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMPH4015SSS-13 | DIODES INC. |
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 9000 µohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 2418 шт: термін постачання 21-31 дні (днів) |
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DMPH4015SSS-13 | Diodes Incorporated |
Description: MOSFET P-CHANNEL 40V 11.4A 8SO Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) FET Type: P-Channel |
на замовлення 13640 шт: термін постачання 21-31 дні (днів) |
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DMPH4015SSS-13 | DIODES INC. |
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 9000 µohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 2418 шт: термін постачання 21-31 дні (днів) |
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DMPH4015SSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 1296 шт: термін постачання 21-30 дні (днів) |
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Виробник: DIODES INC.
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 9000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.4W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 9000µohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 9000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.4W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 9000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 2418 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 52.76 грн |
| 500+ | 37.03 грн |
| 1000+ | 32.70 грн |
| DMPH4015SSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 11.4A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: P-Channel
Description: MOSFET P-CHANNEL 40V 11.4A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: P-Channel
на замовлення 13640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.21 грн |
| 10+ | 75.96 грн |
| 100+ | 51.04 грн |
| 500+ | 37.88 грн |
| 1000+ | 34.72 грн |
| DMPH4015SSS-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 9000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.4W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 9000µohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 9000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.4W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 9000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 2418 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 128.81 грн |
| 12+ | 73.43 грн |
| 100+ | 52.76 грн |
| 500+ | 37.03 грн |
| 1000+ | 32.70 грн |
| DMPH4015SSS-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
MOSFETs MOSFET BVDSS: 31V-40V
на замовлення 1296 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.02 грн |
| 10+ | 86.54 грн |
| 100+ | 50.21 грн |
| 500+ | 39.73 грн |
| 1000+ | 36.36 грн |
| 2500+ | 32.63 грн |
| 5000+ | 31.79 грн |