DMPH4016SK3Q-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V TO252 T&R, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Grade: Automotive, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 4.9W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).