DMPH4023SK3Q-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 50A TO252 T&R
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис DMPH4023SK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 40V 50A TO252 T&R, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252, (D-Pak), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMPH4023SK3Q-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMPH4023SK3Q-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V TO252 T&R 2.5K |
товару немає в наявності |
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| DMPH4023SK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -35A Drain-source voltage: -40V Gate charge: 18.7nC On-state resistance: 26mΩ Power dissipation: 3.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
товару немає в наявності |