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DMPH4025SFVWQ-7

DMPH4025SFVWQ-7 Diodes Incorporated


Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+134.56 грн
10+81.68 грн
100+46.77 грн
500+36.78 грн
1000+31.44 грн
2000+25.46 грн
4000+25.25 грн
Мінімальне замовлення: 3
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Технічний опис DMPH4025SFVWQ-7 Diodes Incorporated

Description: MOSFET P-CH 40V PWRDI3333, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Інші пропозиції DMPH4025SFVWQ-7

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DMPH4025SFVWQ-7 DMPH4025SFVWQ-7 Diodes Incorporated Description: MOSFET P-CH 40V PWRDI3333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMPH4025SFVWQ-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
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DMPH4025SFVWQ-7
DMPH4025SFVWQ-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
DMPH4025SFVWQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
товару немає в наявності
В кошику  од. на суму  грн.