DMPH4029LFG-7

DMPH4029LFG-7 Diodes Incorporated


DMPH4029LFG.pdf
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 8A/22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
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Технічний опис DMPH4029LFG-7 Diodes Incorporated

Description: MOSFET P-CH 40V 8A/22A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V.

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DMPH4029LFG-7 DMPH4029LFG-7 Виробник : Diodes Incorporated DMPH4029LFG.pdf MOSFETs MOSFET BVDSS: 31V-40V
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DMPH4029LFG-7 Виробник : DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
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