| Кількість | Ціна |
|---|---|
| 3+ | 124.71 грн |
| 10+ | 78.61 грн |
| 100+ | 45.64 грн |
| 500+ | 36.08 грн |
| 1000+ | 32.98 грн |
| 2500+ | 29.26 грн |
| 5000+ | 27.92 грн |
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Технічний опис DMPH6050SPDQ-13 Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції DMPH6050SPDQ-13 за ціною від 34.87 грн до 125.79 грн
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DMPH6050SPDQ-13 | Diodes Incorporated |
 Description: MOSFET 2P-CH 26A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2365 шт: термін постачання 21-31 дні (днів) |
|
| DMPH6050SPDQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 76.64 грн |
| 100+ | 50.06 грн |
| 500+ | 38.13 грн |
| 1000+ | 34.87 грн |