DMPH6050SPDWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис DMPH6050SPDWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.5W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMPH6050SPDWQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMPH6050SPDWQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K |
товару немає в наявності |