DMS2085LSD-13 DIODES INC.
Виробник: DIODES INC.
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.1W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.07ohm
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 14.03 грн |
| 500+ | 8.84 грн |
| 1000+ | 7.31 грн |
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Технічний опис DMS2085LSD-13 DIODES INC.
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 3.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 1.1W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.07ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції DMS2085LSD-13 за ціною від 7.31 грн до 34.71 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMS2085LSD-13 | Diodes Incorporated |
MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr |
на замовлення 4333 шт: термін постачання 21-30 дні (днів) |
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DMS2085LSD-13 | DIODES INC. |
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.1W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
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DMS2085LSD-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.1W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 87500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DMS2085LSD-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.1W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 87500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| DMS2085LSD-13 |
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Виробник: Diodes Incorporated
MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
на замовлення 4333 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.54 грн |
| 16+ | 21.11 грн |
| 100+ | 11.96 грн |
| 500+ | 8.86 грн |
| 1000+ | 7.95 грн |
| 2500+ | 7.38 грн |
| DMS2085LSD-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.1W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.07ohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.1W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.07ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 34.71 грн |
| 39+ | 21.41 грн |
| 100+ | 14.03 грн |
| 500+ | 8.84 грн |
| 1000+ | 7.31 грн |
| DMS2085LSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 87500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMS2085LSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 87500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.