DMS3015SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.55W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 2500+ | 10.54 грн |
| 5000+ | 9.27 грн |
| 7500+ | 8.82 грн |
| 12500+ | 8.23 грн |
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Технічний опис DMS3015SSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 1.55W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V.
Інші пропозиції DMS3015SSS-13 за ціною від 12.39 грн до 50.63 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMS3015SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 11A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.55W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 68031 шт: термін постачання 21-31 дні (днів) |
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| DMS3015SSS-13 | Diodes Incorporated |
MOSFET MOSFET N-CHAN |
на замовлення 4915 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMS3015SSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 11A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.55W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.55W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 68031 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 11+ | 30.09 грн |
| 100+ | 19.33 грн |
| 500+ | 13.79 грн |
| 1000+ | 12.39 грн |
| DMS3015SSS-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET N-CHAN
MOSFET MOSFET N-CHAN
на замовлення 4915 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.