DMT10H003SPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI50, Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type Q), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.2W (Ta), 139W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 152A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).