DMT10H009LCG-7 Diodes Incorporated

Description: MOSFET N-CH 100V 12.4A/47A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: V-DFN3333-8 (Type B), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).