Технічний опис DMT10H009LH3 Diodes Inc
Description: MOSFET N-CH 100V 84A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V.
Інші пропозиції DMT10H009LH3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT10H009LH3 | Виробник : DIODES INCORPORATED |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 Mounting: THT Case: TO251 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 67A Power dissipation: 61W Polarisation: unipolar Kind of package: tube Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 336A кількість в упаковці: 1 шт |
товар відсутній |
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| DMT10H009LH3 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V 84A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V |
товар відсутній |
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| DMT10H009LH3 | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 Mounting: THT Case: TO251 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 67A Power dissipation: 61W Polarisation: unipolar Kind of package: tube Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 336A |
товар відсутній |