DMT10H010LCT Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 3+ | 132.09 грн |
| 10+ | 76.75 грн |
| 100+ | 60.27 грн |
| 500+ | 50.99 грн |
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Технічний опис DMT10H010LCT Diodes Incorporated
Description: MOSFET N-CH 100V 98A TO220AB, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 139W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 98A (Tc).
Інші пропозиції DMT10H010LCT за ціною від 50.93 грн до 165.35 грн
| Фото | Назва | Виробник | Інформація |
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DMT10H010LCT | Diodes Incorporated |
 Description: MOSFET N-CH 100V 98A TO220ABFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) |
на замовлення 9323 шт: термін постачання 21-31 дні (днів) |
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| DMT10H010LCT |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 98A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Description: MOSFET N-CH 100V 98A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
на замовлення 9323 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 165.35 грн |
| 50+ | 75.29 грн |
| 100+ | 68.31 грн |
| 500+ | 56.24 грн |
| 1000+ | 51.74 грн |
| 2000+ | 50.93 грн |