DMT10H010SPS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 62.2 грн |
| 100+ | 48.38 грн |
| 500+ | 38.48 грн |
| 1000+ | 31.35 грн |
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Технічний опис DMT10H010SPS-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V.
Інші пропозиції DMT10H010SPS-13 за ціною від 31.49 грн до 86.02 грн
| Фото | Назва | Виробник | Інформація |
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DMT10H010SPS-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
на замовлення 2462 шт: термін постачання 21-30 дні (днів) |
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DMT10H010SPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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DMT10H010SPS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 100V 10.7A 8-Pin PowerDI EP T/R |
товар відсутній |
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| DMT10H010SPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 11.5mΩ Drain current: 8.6A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A кількість в упаковці: 2500 шт |
товар відсутній |
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| DMT10H010SPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 11.5mΩ Drain current: 8.6A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A |
товар відсутній |