DMT10H015LCG-13 Diodes Incorporated

Description: MOSFET N-CH 100V 9.4A/34A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: V-DFN3333-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).