DMT10H015LFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 28.68 грн |
| 4000+ | 26.03 грн |
| 6000+ | 25.57 грн |
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Технічний опис DMT10H015LFG-7 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMT10H015LFG-7 за ціною від 24.75 грн до 38.81 грн
| Фото | Назва | Виробник | Інформація |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 108296 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LFG-7 | Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W |
на замовлення 6993 шт: термін постачання 21-30 дні (днів) |
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| DMT10H015LFG-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 108296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 10+ | 35.81 грн |
| 100+ | 32.19 грн |
| 500+ | 30.08 грн |
| DMT10H015LFG-7 |
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Виробник: Diodes Incorporated
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
на замовлення 6993 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.81 грн |
| 10+ | 37.53 грн |
| 100+ | 29.40 грн |
| 500+ | 28.76 грн |
| 1000+ | 27.57 грн |
| 2000+ | 25.25 грн |
| 4000+ | 24.75 грн |